IXYS IXFT10N100
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- IXFT10N100
- IXYS
- MOSFET N-CH 1000V 10A TO268
- Transistors - FETs, MOSFETs - Single
- IXFT10N100 Лист данных
- TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Tube
-
Lead free / RoHS Compliant - 4175
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number IXFT10N100 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer IXYS |
| Description MOSFET N-CH 1000V 10A TO268 |
| Package Tube |
| Series HiPerFET™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package TO-268AA |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 300W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 1000 V |
| Current - Continuous Drain (Id) @ 25°C 10A (Tc) |
| Rds On (Max) @ Id, Vgs 1.2Ohm @ 5A, 10V |
| Vgs(th) (Max) @ Id 4.5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 4000 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
IXFT10N100 Гарантии
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