IXYS IXFR75N10Q
- IXFR75N10Q
- IXYS
- MOSFET N-CH 100V ISOPLUS247
- Transistors - FETs, MOSFETs - Single
- IXFR75N10Q Лист данных
- TO-247-3
- Tube
- Lead free / RoHS Compliant
- 1709
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IXFR75N10Q |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET N-CH 100V ISOPLUS247 |
Package Tube |
Series - |
Operating Temperature - |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package ISOPLUS247™ |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) - |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 100 V |
Current - Continuous Drain (Id) @ 25°C - |
Rds On (Max) @ Id, Vgs - |
Vgs(th) (Max) @ Id - |
Gate Charge (Qg) (Max) @ Vgs - |
Input Capacitance (Ciss) (Max) @ Vds - |
Vgs (Max) - |
Drive Voltage (Max Rds On, Min Rds On) - |
Package_case TO-247-3 |
IXFR75N10Q Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXFR75N10Q ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
IXYS
IXFX21N100Q
MOSFET N-CH 1000V 21A PLUS247-3
IXFR27N80Q
MOSFET N-CH 1000V 21A PLUS247-3
IXFR34N80
MOSFET N-CH 1000V 21A PLUS247-3
IXFR25N90
MOSFET N-CH 1000V 21A PLUS247-3
IXFX26N90
MOSFET N-CH 1000V 21A PLUS247-3
IXFR20N120P
MOSFET N-CH 1000V 21A PLUS247-3
IXFK100N10
MOSFET N-CH 1000V 21A PLUS247-3
IXFL60N80P
MOSFET N-CH 1000V 21A PLUS247-3
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic
ON NTD2955G series packages and features are different
NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.