IXYS IXFR48N60Q3
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- IXFR48N60Q3
- IXYS
- MOSFET N-CH 600V 32A ISOPLUS247
- Transistors - FETs, MOSFETs - Single
- IXFR48N60Q3 Лист данных
- TO-247-3
- Tube
-
Lead free / RoHS Compliant - 3871
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number IXFR48N60Q3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer IXYS |
| Description MOSFET N-CH 600V 32A ISOPLUS247 |
| Package Tube |
| Series HiPerFET™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-247-3 |
| Supplier Device Package ISOPLUS247™ |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 500W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 600 V |
| Current - Continuous Drain (Id) @ 25°C 32A (Tc) |
| Rds On (Max) @ Id, Vgs 154mOhm @ 24A, 10V |
| Vgs(th) (Max) @ Id 6.5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 7020 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-247-3 |
IXFR48N60Q3 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXFR48N60Q3 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
IXFR48N60Q3 сопутствующие товары
Комментарии
IXYS
IXFK50N50
MOSFET N-CH 500V 50A TO-264AA
IXFB52N90P
MOSFET N-CH 500V 50A TO-264AA
IXFR90N20Q
MOSFET N-CH 500V 50A TO-264AA
IXTE250N10
MOSFET N-CH 500V 50A TO-264AA
IXFN100N20
MOSFET N-CH 500V 50A TO-264AA
IXFX26N120P
MOSFET N-CH 500V 50A TO-264AA
IXKG25N80C
MOSFET N-CH 500V 50A TO-264AA
IXFN44N50Q
MOSFET N-CH 500V 50A TO-264AA
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
1N4004 is a silicon rectifier diode, which has the following typical parameter specifications:
It is a member of the 1N400x series (1N4001-1N4007) rectifier diodes,
which are often used in various electronic devices for voltage rectification, such as power converters or power adapters.
1N4002 Diode Features/Technical Specifications (Partial Parameters):
The pin str
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic
