IXYS IXFP270N06T3
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- IXFP270N06T3
- IXYS
- MOSFET N-CH 60V 270A TO220AB
- Transistors - FETs, MOSFETs - Single
- IXFP270N06T3 Лист данных
- TO-220-3
- Tube
-
Lead free / RoHS Compliant - 2075
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number IXFP270N06T3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer IXYS |
| Description MOSFET N-CH 60V 270A TO220AB |
| Package Tube |
| Series HiperFET™, TrenchT3™ |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-220-3 |
| Supplier Device Package TO-220-3 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 480W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 60 V |
| Current - Continuous Drain (Id) @ 25°C 270A (Tc) |
| Rds On (Max) @ Id, Vgs 3.1mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 12600 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-220-3 |
IXFP270N06T3 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXFP270N06T3 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
IXFP270N06T3 сопутствующие товары
Комментарии
IXYS
IXFP22N65X2
MOSFET N-CH 650V 22A TO220
IXFA220N06T3
MOSFET N-CH 650V 22A TO220
IXTA270N04T4-7
MOSFET N-CH 650V 22A TO220
IXFP220N06T3
MOSFET N-CH 650V 22A TO220
IXFY4N85X
MOSFET N-CH 650V 22A TO220
IXFT30N85XHV
MOSFET N-CH 650V 22A TO220
IXFH6N100F
MOSFET N-CH 650V 22A TO220
IXFH30N85X
MOSFET N-CH 650V 22A TO220
What is transistor?
What is transistor?
What types of transistors in the market?
Function and properties of a transistor
Working principle of transistor
Transistor vs IC amplify
What’s a transistor used for?
Trend of transistors
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic
ON NTD2955G series packages and features are different
NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.
