IXYS IXFP12N65X2M
- IXFP12N65X2M
- IXYS
- MOSFET N-CH 650V 12A TO220
- Transistors - FETs, MOSFETs - Single
- IXFP12N65X2M Лист данных
- TO-220-3 Full Pack, Isolated Tab
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 28992
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IXFP12N65X2M |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET N-CH 650V 12A TO220 |
Package Cut Tape (CT) |
Series HiPerFET™ |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package TO-220 Isolated Tab |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 40W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 650 V |
Current - Continuous Drain (Id) @ 25°C 12A (Tc) |
Rds On (Max) @ Id, Vgs 310mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 18.5 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1134 pF @ 25 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-220-3 Full Pack, Isolated Tab |
IXFP12N65X2M Гарантии
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