IXYS IXFN30N110P
- IXFN30N110P
- IXYS
- MOSFET N-CH 1100V 25A SOT-227B
- Transistors - FETs, MOSFETs - Single
- IXFN30N110P Лист данных
- SOT-227-4, miniBLOC
- Tube
- Lead free / RoHS Compliant
- 19411
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IXFN30N110P |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET N-CH 1100V 25A SOT-227B |
Package Tube |
Series Polar™ |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Chassis Mount |
Package / Case SOT-227-4, miniBLOC |
Supplier Device Package SOT-227B |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 695W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 1100 V |
Current - Continuous Drain (Id) @ 25°C 25A (Tc) |
Rds On (Max) @ Id, Vgs 360mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id 6.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 235 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 13600 pF @ 25 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case SOT-227-4, miniBLOC |
IXFN30N110P Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXFN30N110P ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
IXYS
IXFL32N120P
MOSFET N-CH 1200V 24A I5PAK
IXFE80N50
MOSFET N-CH 1200V 24A I5PAK
IXTN8N150L
MOSFET N-CH 1200V 24A I5PAK
IXTN79N20
MOSFET N-CH 1200V 24A I5PAK
IXFE180N20
MOSFET N-CH 1200V 24A I5PAK
IXFN72N55Q2
MOSFET N-CH 1200V 24A I5PAK
IXTN110N20L2
MOSFET N-CH 1200V 24A I5PAK
IXTN210P10T
MOSFET N-CH 1200V 24A I5PAK
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications
1N5819 Schottky Diode Description:
1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.