IXFK230N20T

IXYS IXFK230N20T

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • IXFK230N20T
  • IXYS
  • MOSFET N-CH 200V 230A TO264AA
  • Transistors - FETs, MOSFETs - Single
  • IXFK230N20T Лист данных
  • TO-264-3, TO-264AA
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IXFK230N20TLead free / RoHS Compliant
  • 854
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IXFK230N20T
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
IXYS
Description
MOSFET N-CH 200V 230A TO264AA
Package
Tube
Series
GigaMOS™
Operating Temperature
-
Mounting Type
Through Hole
Package / Case
TO-264-3, TO-264AA
Supplier Device Package
TO-264AA (IXFK)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1670W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
230A (Tc)
Rds On (Max) @ Id, Vgs
7.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
378 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
28000 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-264-3, TO-264AA

IXFK230N20T Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/IXFK230N20T

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/IXFK230N20T

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/IXFK230N20T

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о IXFK230N20T ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

IXYS
IXYS,https://www.jinftry.ru/product_detail/IXFK230N20T
IXFX230N20T,https://www.jinftry.ru/product_detail/IXFK230N20T
IXFX230N20T

MOSFET N-CH 200V 230A PLUS247-3

IXFK120N20,https://www.jinftry.ru/product_detail/IXFK230N20T
IXFK120N20

MOSFET N-CH 200V 230A PLUS247-3

IXFX120N65X2,https://www.jinftry.ru/product_detail/IXFK230N20T
IXFX120N65X2

MOSFET N-CH 200V 230A PLUS247-3

IXFX48N50Q,https://www.jinftry.ru/product_detail/IXFK230N20T
IXFX48N50Q

MOSFET N-CH 200V 230A PLUS247-3

MMIX1F520N075T2,https://www.jinftry.ru/product_detail/IXFK230N20T
MMIX1F520N075T2

MOSFET N-CH 200V 230A PLUS247-3

IXFX140N30P,https://www.jinftry.ru/product_detail/IXFK230N20T
IXFX140N30P

MOSFET N-CH 200V 230A PLUS247-3

IXFX64N60P,https://www.jinftry.ru/product_detail/IXFK230N20T
IXFX64N60P

MOSFET N-CH 200V 230A PLUS247-3

IXFK80N50P,https://www.jinftry.ru/product_detail/IXFK230N20T
IXFK80N50P

MOSFET N-CH 200V 230A PLUS247-3

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP