IXYS IXFH9N80
- IXFH9N80
- IXYS
- MOSFET N-CH 800V 9A TO247AD
- Transistors - FETs, MOSFETs - Single
- IXFH9N80 Лист данных
- TO-247-3
- Jinftry-Reel®
- Lead free / RoHS Compliant
- 1386
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IXFH9N80 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET N-CH 800V 9A TO247AD |
Package Jinftry-Reel® |
Series HiPerFET™ |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package TO-247AD (IXFH) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 180W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 800 V |
Current - Continuous Drain (Id) @ 25°C 9A (Tc) |
Rds On (Max) @ Id, Vgs 900mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id 4.5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-247-3 |
IXFH9N80 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXFH9N80 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
IXYS
IXFH52N50P2
MOSFET N-CH 500V 52A TO247AD
IXTH15N50L2
MOSFET N-CH 500V 52A TO247AD
IXFH50N60P3
MOSFET N-CH 500V 52A TO247AD
IXTT82N25P
MOSFET N-CH 500V 52A TO247AD
IXFN55N50
MOSFET N-CH 500V 52A TO247AD
IXFN36N60
MOSFET N-CH 500V 52A TO247AD
IXTK110N20L2
MOSFET N-CH 500V 52A TO247AD
IXFR80N50Q3
MOSFET N-CH 500V 52A TO247AD
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications
1N5819 Schottky Diode Description:
1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.