IXYS IXFH230N10T
- IXFH230N10T
- IXYS
- MOSFET N-CH 100V 230A TO247AD
- Transistors - FETs, MOSFETs - Single
- IXFH230N10T Лист данных
- TO-247-3
- Tube
- Lead free / RoHS Compliant
- 14103
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IXFH230N10T |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET N-CH 100V 230A TO247AD |
Package Tube |
Series HiPerFET™ |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package TO-247AD (IXFH) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 650W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 100 V |
Current - Continuous Drain (Id) @ 25°C 230A (Tc) |
Rds On (Max) @ Id, Vgs 4.7mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 250 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 15300 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-247-3 |
IXFH230N10T Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXFH230N10T ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
IXYS
IXFT14N80P
MOSFET N-CH 800V 14A TO268
IXFV16N80P
MOSFET N-CH 800V 14A TO268
IXTT110N10P
MOSFET N-CH 800V 14A TO268
IXTQ26N60P
MOSFET N-CH 800V 14A TO268
IXTQ30N50P
MOSFET N-CH 800V 14A TO268
IXFH12N100P
MOSFET N-CH 800V 14A TO268
IXTT26N50P
MOSFET N-CH 800V 14A TO268
IXTT50P085
MOSFET N-CH 800V 14A TO268
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
Datasheet and working principle of 1N4001 rectifier diode
Friends who are familiar with diodes should know that 1N4001 is a common rectifier diode used to convert alternating current into direct current. This type of diode has a wide range of applications in electronic equipment and circuits.
What is a Junction Diode? What are the types of junction diodes?
What is a Junction Diode? A junction diode is a semiconductor device consisting of a structure composed of a P-type semiconductor and an N-type semiconductor. It is also known as a PN junction diode or simply a diode. Junction diodes are one of the most basic and common types of diodes.
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.