IXFH12N120

IXYS IXFH12N120

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • IXFH12N120
  • IXYS
  • MOSFET N-CH 1200V 12A TO247AD
  • Transistors - FETs, MOSFETs - Single
  • IXFH12N120 Лист данных
  • TO-247-3
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IXFH12N120Lead free / RoHS Compliant
  • 2650
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IXFH12N120
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
IXYS
Description
MOSFET N-CH 1200V 12A TO247AD
Package
Tube
Series
HiPerFET™
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247AD (IXFH)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
500W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Rds On (Max) @ Id, Vgs
1.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3400 pF @ 25 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-247-3

IXFH12N120 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/IXFH12N120

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/IXFH12N120

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/IXFH12N120

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о IXFH12N120 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

IXYS
IXYS,https://www.jinftry.ru/product_detail/IXFH12N120
IXKH47N60C,https://www.jinftry.ru/product_detail/IXFH12N120
IXKH47N60C

MOSFET N-CH 600V 47A TO247AD

IXFX32N90P,https://www.jinftry.ru/product_detail/IXFH12N120
IXFX32N90P

MOSFET N-CH 600V 47A TO247AD

IXFX44N50Q,https://www.jinftry.ru/product_detail/IXFH12N120
IXFX44N50Q

MOSFET N-CH 600V 47A TO247AD

IXFT12N100,https://www.jinftry.ru/product_detail/IXFH12N120
IXFT12N100

MOSFET N-CH 600V 47A TO247AD

IXTK90N15,https://www.jinftry.ru/product_detail/IXFH12N120
IXTK90N15

MOSFET N-CH 600V 47A TO247AD

IXFX12N90Q,https://www.jinftry.ru/product_detail/IXFH12N120
IXFX12N90Q

MOSFET N-CH 600V 47A TO247AD

IXFX90N60X,https://www.jinftry.ru/product_detail/IXFH12N120
IXFX90N60X

MOSFET N-CH 600V 47A TO247AD

IXFR44N80P,https://www.jinftry.ru/product_detail/IXFH12N120
IXFR44N80P

MOSFET N-CH 600V 47A TO247AD

NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements

NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic

Classification of IGBT modules, difference between application characteristics and MOSFETs

Classification of IGBT modules, difference between application characteristics and MOSFETs Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:

The most complete introduction to IGBT modules in 2023

IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.

ON NTD2955G series packages and features are different

NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP