IXFH100N30X3

IXYS IXFH100N30X3

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • IXFH100N30X3
  • IXYS
  • MOSFET N-CH 300V 100A TO247
  • Transistors - FETs, MOSFETs - Single
  • IXFH100N30X3 Лист данных
  • TO-247-3
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IXFH100N30X3Lead free / RoHS Compliant
  • 18325
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IXFH100N30X3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
IXYS
Description
MOSFET N-CH 300V 100A TO247
Package
Tube
Series
HiPerFET™
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247 (IXTH)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
480W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
300 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Rds On (Max) @ Id, Vgs
13.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
7660 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-247-3

IXFH100N30X3 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/IXFH100N30X3

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/IXFH100N30X3

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/IXFH100N30X3

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о IXFH100N30X3 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

IXYS
IXYS,https://www.jinftry.ru/product_detail/IXFH100N30X3
IXFH150N25X3,https://www.jinftry.ru/product_detail/IXFH100N30X3
IXFH150N25X3

MOSFET N-CH 250V 150A TO247

IXFK150N30X3,https://www.jinftry.ru/product_detail/IXFH100N30X3
IXFK150N30X3

MOSFET N-CH 250V 150A TO247

IXFT150N30X3HV,https://www.jinftry.ru/product_detail/IXFH100N30X3
IXFT150N30X3HV

MOSFET N-CH 250V 150A TO247

IXFK32N100X,https://www.jinftry.ru/product_detail/IXFH100N30X3
IXFK32N100X

MOSFET N-CH 250V 150A TO247

IXTT240N15X4HV,https://www.jinftry.ru/product_detail/IXFH100N30X3
IXTT240N15X4HV

MOSFET N-CH 250V 150A TO247

IXFB70N100X,https://www.jinftry.ru/product_detail/IXFH100N30X3
IXFB70N100X

MOSFET N-CH 250V 150A TO247

IXFN50N120SK,https://www.jinftry.ru/product_detail/IXFH100N30X3
IXFN50N120SK

MOSFET N-CH 250V 150A TO247

IXFN70N120SK,https://www.jinftry.ru/product_detail/IXFH100N30X3
IXFN70N120SK

MOSFET N-CH 250V 150A TO247

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i

Classification of IGBT modules, difference between application characteristics and MOSFETs

Classification of IGBT modules, difference between application characteristics and MOSFETs Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:

1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications

1N5819 Schottky Diode Description: 1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP