IXFA6N120P

IXYS IXFA6N120P

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • IXFA6N120P
  • IXYS
  • MOSFET N-CH 1200V 6A TO263
  • Transistors - FETs, MOSFETs - Single
  • IXFA6N120P Лист данных
  • TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IXFA6N120PLead free / RoHS Compliant
  • 721
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IXFA6N120P
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
IXYS
Description
MOSFET N-CH 1200V 6A TO263
Package
Tube
Series
HiPerFET™, PolarP2™
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263 (IXFA)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
250W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Rds On (Max) @ Id, Vgs
2.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2830 pF @ 25 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IXFA6N120P Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/IXFA6N120P

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/IXFA6N120P

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/IXFA6N120P

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о IXFA6N120P ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

IXYS
IXYS,https://www.jinftry.ru/product_detail/IXFA6N120P
IXFA4N100Q,https://www.jinftry.ru/product_detail/IXFA6N120P
IXFA4N100Q

MOSFET N-CH 1000V 4A TO263

IXTH110N25T,https://www.jinftry.ru/product_detail/IXFA6N120P
IXTH110N25T

MOSFET N-CH 1000V 4A TO263

IXFA3N120,https://www.jinftry.ru/product_detail/IXFA6N120P
IXFA3N120

MOSFET N-CH 1000V 4A TO263

IXTH8P50,https://www.jinftry.ru/product_detail/IXFA6N120P
IXTH8P50

MOSFET N-CH 1000V 4A TO263

IXTH26P20P,https://www.jinftry.ru/product_detail/IXFA6N120P
IXTH26P20P

MOSFET N-CH 1000V 4A TO263

IXFH26N50P,https://www.jinftry.ru/product_detail/IXFA6N120P
IXFH26N50P

MOSFET N-CH 1000V 4A TO263

IXTH96P085T,https://www.jinftry.ru/product_detail/IXFA6N120P
IXTH96P085T

MOSFET N-CH 1000V 4A TO263

IXTA6N50D2,https://www.jinftry.ru/product_detail/IXFA6N120P
IXTA6N50D2

MOSFET N-CH 1000V 4A TO263

What is a thyristor and what are its advantages?

What is a thyristor and what are its advantages? What is the working principle of the thyristor? How to measure the thyristors? What are the classifications of thyristors? What is the function of the thyristor? Advantages of using thyristor What are the main applications of thyristors?

1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet

1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet An introduction to the 1N5408 power/rectifier diode is discussed here. 1N5408 is a very common rectifier diode that is widely used in electronic equipment. This is a general purpose silicon diode, the 1N5408 low frequency power diode, used in various rectification and power conversion applications.

The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?

The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001? "1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes. 1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.

The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years

PS22A78-E Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:   Low-loss, Full Gate CSTBT IGBTs Single Power Supply   Integrated HVICs   Direct Connection to CPUApplications:
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP