IXYS IXBR42N170
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- IXBR42N170
- IXYS
- IGBT 1700V 57A 200W ISOPLUS247
- Transistors - IGBTs - Single
- IXBR42N170 Лист данных
- TO-247-3
- Tube
-
Lead free / RoHS Compliant - 8955
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number IXBR42N170 |
| Category Transistors - IGBTs - Single |
| Manufacturer IXYS |
| Description IGBT 1700V 57A 200W ISOPLUS247 |
| Package Tube |
| Series BIMOSFET™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-247-3 |
| Supplier Device Package ISOPLUS247™ |
| Power - Max 200 W |
| Input Type Standard |
| Reverse Recovery Time (trr) 1.32 µs |
| Current - Collector (Ic) (Max) 57 A |
| Voltage - Collector Emitter Breakdown (Max) 1700 V |
| IGBT Type - |
| Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 42A |
| Gate Charge 188 nC |
| Td (on/off) @ 25°C - |
| Test Condition - |
| Current - Collector Pulsed (Icm) 300 A |
| Switching Energy - |
| Package_case TO-247-3 |
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IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
