ISZ080N10NM6ATMA1

Infineon Technologies ISZ080N10NM6ATMA1

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  • ISZ080N10NM6ATMA1
  • Infineon Technologies
  • TRENCH >=100V PG-TSDSON-8
  • Transistors - FETs, MOSFETs - Single
  • ISZ080N10NM6ATMA1 Лист данных
  • 8-PowerTDFN
  • Tape & Reel (TR)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/ISZ080N10NM6ATMA1Lead free / RoHS Compliant
  • 4730
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
ISZ080N10NM6ATMA1
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Description
TRENCH >=100V PG-TSDSON-8
Package
Tape & Reel (TR)
Series
OptiMOS™
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
PG-TSDSON-8 FL
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3W (Ta), 100W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
13A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs
8.04mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3.3V @ 36µA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 50 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
8V, 10V
Package_case
8-PowerTDFN

ISZ080N10NM6ATMA1 Гарантии

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