Infineon Technologies ISZ080N10NM6ATMA1
- ISZ080N10NM6ATMA1
- Infineon Technologies
- TRENCH >=100V PG-TSDSON-8
- Transistors - FETs, MOSFETs - Single
- ISZ080N10NM6ATMA1 Лист данных
- 8-PowerTDFN
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 4730
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number ISZ080N10NM6ATMA1 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description TRENCH >=100V PG-TSDSON-8 |
Package Tape & Reel (TR) |
Series OptiMOS™ |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-PowerTDFN |
Supplier Device Package PG-TSDSON-8 FL |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 3W (Ta), 100W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 100 V |
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 75A (Tc) |
Rds On (Max) @ Id, Vgs 8.04mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id 3.3V @ 36µA |
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 50 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V |
Package_case 8-PowerTDFN |
ISZ080N10NM6ATMA1 Гарантии
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