ISC060N10NM6ATMA1

Infineon Technologies ISC060N10NM6ATMA1

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  • ISC060N10NM6ATMA1
  • Infineon Technologies
  • TRENCH >=100V PG-TDSON-8
  • Transistors - FETs, MOSFETs - Single
  • ISC060N10NM6ATMA1 Лист данных
  • 8-PowerTDFN
  • Cut Tape (CT)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/ISC060N10NM6ATMA1Lead free / RoHS Compliant
  • 1076
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
ISC060N10NM6ATMA1
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Description
TRENCH >=100V PG-TDSON-8
Package
Cut Tape (CT)
Series
OptiMOS™
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
PG-TDSON-8 FL
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3W (Ta), 125W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
15A (Ta), 97A (Tc)
Rds On (Max) @ Id, Vgs
6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
3.3V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2500 pF @ 50 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
8V, 10V
Package_case
8-PowerTDFN

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