IRLTS6342TRPBF

Infineon Technologies IRLTS6342TRPBF

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • IRLTS6342TRPBF
  • Infineon Technologies
  • MOSFET N-CH 30V 8.3A 6TSOP
  • Transistors - FETs, MOSFETs - Single
  • IRLTS6342TRPBF Лист данных
  • SOT-23-6
  • Tape & Reel (TR)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IRLTS6342TRPBFLead free / RoHS Compliant
  • 4207
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IRLTS6342TRPBF
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 30V 8.3A 6TSOP
Package
Tape & Reel (TR)
Series
HEXFET®
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Supplier Device Package
6-TSOP
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2W (Ta)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
8.3A (Ta)
Rds On (Max) @ Id, Vgs
17.5mOhm @ 8.3A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
1010 pF @ 25 V
Vgs (Max)
±12V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Package_case
SOT-23-6

IRLTS6342TRPBF Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/IRLTS6342TRPBF

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/IRLTS6342TRPBF

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/IRLTS6342TRPBF

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о IRLTS6342TRPBF ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Infineon Technologies
Infineon Technologies,https://www.jinftry.ru/product_detail/IRLTS6342TRPBF
SPN02N60S5,https://www.jinftry.ru/product_detail/IRLTS6342TRPBF
SPN02N60S5

MOSFET N-CH 600V 400MA SOT223-4

SPN02N60C3 E6433,https://www.jinftry.ru/product_detail/IRLTS6342TRPBF
SPN02N60C3 E6433

MOSFET N-CH 600V 400MA SOT223-4

SPN02N60C3,https://www.jinftry.ru/product_detail/IRLTS6342TRPBF
SPN02N60C3

MOSFET N-CH 600V 400MA SOT223-4

SPN01N60C3,https://www.jinftry.ru/product_detail/IRLTS6342TRPBF
SPN01N60C3

MOSFET N-CH 600V 400MA SOT223-4

SPI80N10L,https://www.jinftry.ru/product_detail/IRLTS6342TRPBF
SPI80N10L

MOSFET N-CH 600V 400MA SOT223-4

SPI80N08S2-07R,https://www.jinftry.ru/product_detail/IRLTS6342TRPBF
SPI80N08S2-07R

MOSFET N-CH 600V 400MA SOT223-4

SPI80N08S2-07,https://www.jinftry.ru/product_detail/IRLTS6342TRPBF
SPI80N08S2-07

MOSFET N-CH 600V 400MA SOT223-4

SPI80N06S2L-11,https://www.jinftry.ru/product_detail/IRLTS6342TRPBF
SPI80N06S2L-11

MOSFET N-CH 600V 400MA SOT223-4

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i

Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives

Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives 1N4004 is a silicon rectifier diode, which has the following typical parameter specifications: It is a member of the 1N400x series (1N4001-1N4007) rectifier diodes, which are often used in various electronic devices for voltage rectification, such as power converters or power adapters. 1N4002 Diode Features/Technical Specifications (Partial Parameters): The pin str

Model BC547/2N2222/2N4401 can replace 2N3904 transistor

Model BC547/2N2222/2N4401 can replace 2N3904 transistor   2N3904 is a commonly used NPN bipolar transistor (2N3904 transistor), which is widely used in electronics due to its wide range of properties. The following are the specific model specifications of each manufacturer of the 2N3904 series: 2N3904, 2N3904 PBFREE, 2N3904,116, 2N3904,412, 2N3904-AP, 2N3904-BP,, 2N3904BU, 2N3904CBU, 2N3904G, 2N3904NLBU, 2N3904RL 1.. etc.

The latest 2N3055 transistor datasheet, application, and price analysis in 2023

2N3055 is a commonly used power transistor with a wide range of applications and reliable performance. Jinftry will introduce the detailed specifications of the 2N3055 transistor, including its datasheet, characteristics, and parameters. In addition, the application areas of the 2N3055 transistor will be discussed, and its price and market supply and demand will be discussed.
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP