IRL6372TRPBF

Infineon Technologies IRL6372TRPBF

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • IRL6372TRPBF
  • Infineon Technologies
  • MOSFET 2N-CH 30V 8.1A 8SOIC
  • Transistors - FETs, MOSFETs - Arrays
  • IRL6372TRPBF Лист данных
  • 8-SOIC (0.154\", 3.90mm Width)
  • Jinftry-Reel®
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IRL6372TRPBFLead free / RoHS Compliant
  • 21592
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IRL6372TRPBF
Category
Transistors - FETs, MOSFETs - Arrays
Manufacturer
Infineon Technologies
Description
MOSFET 2N-CH 30V 8.1A 8SOIC
Package
Jinftry-Reel®
Series
HEXFET®
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154\", 3.90mm Width)
Supplier Device Package
8-SO
Power - Max
2W
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
8.1A
Rds On (Max) @ Id, Vgs
17.9mOhm @ 8.1A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs
11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1020pF @ 25V
Package_case
8-SOIC (0.154\", 3.90mm Width)

IRL6372TRPBF Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/IRL6372TRPBF

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/IRL6372TRPBF

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/IRL6372TRPBF

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о IRL6372TRPBF ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Infineon Technologies
Infineon Technologies,https://www.jinftry.ru/product_detail/IRL6372TRPBF
IRF7501TRPBF,https://www.jinftry.ru/product_detail/IRL6372TRPBF
IRF7501TRPBF

MOSFET 2N-CH 20V 2.4A MICRO8

IRF7105TRPBF,https://www.jinftry.ru/product_detail/IRL6372TRPBF
IRF7105TRPBF

MOSFET 2N-CH 20V 2.4A MICRO8

BSL215CH6327XTSA1,https://www.jinftry.ru/product_detail/IRL6372TRPBF
BSL215CH6327XTSA1

MOSFET 2N-CH 20V 2.4A MICRO8

IRF7303PBF,https://www.jinftry.ru/product_detail/IRL6372TRPBF
IRF7303PBF

MOSFET 2N-CH 20V 2.4A MICRO8

IRF7105PBF,https://www.jinftry.ru/product_detail/IRL6372TRPBF
IRF7105PBF

MOSFET 2N-CH 20V 2.4A MICRO8

IRF7103PBF,https://www.jinftry.ru/product_detail/IRL6372TRPBF
IRF7103PBF

MOSFET 2N-CH 20V 2.4A MICRO8

IRF7329TRPBF,https://www.jinftry.ru/product_detail/IRL6372TRPBF
IRF7329TRPBF

MOSFET 2N-CH 20V 2.4A MICRO8

IRF7380TRPBF,https://www.jinftry.ru/product_detail/IRL6372TRPBF
IRF7380TRPBF

MOSFET 2N-CH 20V 2.4A MICRO8

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP