IRL60S216

Infineon Technologies IRL60S216

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  • IRL60S216
  • Infineon Technologies
  • MOSFET N-CH 60V 195A D2PAK
  • Transistors - FETs, MOSFETs - Single
  • IRL60S216 Лист данных
  • TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Cut Tape (CT)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IRL60S216Lead free / RoHS Compliant
  • 29658
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IRL60S216
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 60V 195A D2PAK
Package
Cut Tape (CT)
Series
HEXFET®, StrongIRFET™
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
PG-TO263-3
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
375W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
195A (Tc)
Rds On (Max) @ Id, Vgs
1.95mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
255 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
15330 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRL60S216 Гарантии

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