Infineon Technologies IRGB4640DPBF
- IRGB4640DPBF
- Infineon Technologies
- DIODE 600V 40A TO-220
- Transistors - IGBTs - Single
- IRGB4640DPBF Лист данных
- TO-220-3
- Tube
- Lead free / RoHS Compliant
- 1467
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IRGB4640DPBF |
Category Transistors - IGBTs - Single |
Manufacturer Infineon Technologies |
Description DIODE 600V 40A TO-220 |
Package Tube |
Series - |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 |
Supplier Device Package TO-220AC |
Power - Max 250 W |
Input Type Standard |
Reverse Recovery Time (trr) 89 ns |
Current - Collector (Ic) (Max) 65 A |
Voltage - Collector Emitter Breakdown (Max) 600 V |
IGBT Type - |
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 24A |
Gate Charge 75 nC |
Td (on/off) @ 25°C 41ns/104ns |
Test Condition 400V, 24A, 10Ohm, 15V |
Current - Collector Pulsed (Icm) 72 A |
Switching Energy 115µJ (on), 600µJ (off) |
Package_case TO-220-3 |
IRGB4640DPBF Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IRGB4640DPBF ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Infineon Technologies
IRGP4269DPBF
IGBT 600V TO247 COPAK
IRGP4263D1PBF
IGBT 600V TO247 COPAK
IRGP4269D-EPBF
IGBT 600V TO247 COPAK
IRGPS47160DPBF
IGBT 600V TO247 COPAK
IRGIB4615DPBF
IGBT 600V TO247 COPAK
IRGIB4610DPBF
IGBT 600V TO247 COPAK
IRGIB4607DPBF
IGBT 600V TO247 COPAK
IRGH4607DPBF
IGBT 600V TO247 COPAK
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i