IRFP440PBF

Vishay Siliconix IRFP440PBF

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • IRFP440PBF
  • Vishay Siliconix
  • MOSFET N-CH 500V 8.8A TO247-3
  • Transistors - FETs, MOSFETs - Single
  • IRFP440PBF Лист данных
  • TO-247-3
  • Bulk
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IRFP440PBFLead free / RoHS Compliant
  • 4517
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IRFP440PBF
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 500V 8.8A TO247-3
Package
Bulk
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247AC
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
150W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
8.8A (Tc)
Rds On (Max) @ Id, Vgs
850mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-247-3

IRFP440PBF Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/IRFP440PBF

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/IRFP440PBF

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/IRFP440PBF

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о IRFP440PBF ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Vishay Siliconix
Vishay Siliconix,https://www.jinftry.ru/product_detail/IRFP440PBF
IRFI9634GPBF,https://www.jinftry.ru/product_detail/IRFP440PBF
IRFI9634GPBF

MOSFET P-CH 250V 4.1A TO220-3

IRFP360LCPBF,https://www.jinftry.ru/product_detail/IRFP440PBF
IRFP360LCPBF

MOSFET P-CH 250V 4.1A TO220-3

SUM110P08-11L-E3,https://www.jinftry.ru/product_detail/IRFP440PBF
SUM110P08-11L-E3

MOSFET P-CH 250V 4.1A TO220-3

SUP75P03-07-E3,https://www.jinftry.ru/product_detail/IRFP440PBF
SUP75P03-07-E3

MOSFET P-CH 250V 4.1A TO220-3

SUM110P06-08L-E3,https://www.jinftry.ru/product_detail/IRFP440PBF
SUM110P06-08L-E3

MOSFET P-CH 250V 4.1A TO220-3

SI7431DP-T1-GE3,https://www.jinftry.ru/product_detail/IRFP440PBF
SI7431DP-T1-GE3

MOSFET P-CH 250V 4.1A TO220-3

SI7439DP-T1-E3,https://www.jinftry.ru/product_detail/IRFP440PBF
SI7439DP-T1-E3

MOSFET P-CH 250V 4.1A TO220-3

SI7439DP-T1-GE3,https://www.jinftry.ru/product_detail/IRFP440PBF
SI7439DP-T1-GE3

MOSFET P-CH 250V 4.1A TO220-3

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP