IRFI4019H-117P

International Rectifier IRFI4019H-117P

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • IRFI4019H-117P
  • International Rectifier
  • IRFI4019 - 12V-300V N-CHANNEL PO
  • Transistors - FETs, MOSFETs - Arrays
  • IRFI4019H-117P Лист данных
  • TO-220-5 Full Pack
  • Bulk
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IRFI4019H-117PLead free / RoHS Compliant
  • 791
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IRFI4019H-117P
Category
Transistors - FETs, MOSFETs - Arrays
Manufacturer
International Rectifier
Description
IRFI4019 - 12V-300V N-CHANNEL PO
Package
Bulk
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-5 Full Pack
Supplier Device Package
TO-220-5 Full-Pak
Power - Max
18W
FET Type
2 N-Channel (Dual)
FET Feature
Standard
Drain to Source Voltage (Vdss)
150V
Current - Continuous Drain (Id) @ 25°C
8.7A
Rds On (Max) @ Id, Vgs
95mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id
4.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
810pF @ 25V
Package_case
TO-220-5 Full Pack

IRFI4019H-117P Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/IRFI4019H-117P

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/IRFI4019H-117P

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/IRFI4019H-117P

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о IRFI4019H-117P ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

International Rectifier

IRFB4019PBF,https://www.jinftry.ru/product_detail/IRFI4019H-117P
IRFB4019PBF

IRFB4019 - 12V-300V N-CHANNEL PO

IRF3710ZPBF,https://www.jinftry.ru/product_detail/IRFI4019H-117P
IRF3710ZPBF

IRFB4019 - 12V-300V N-CHANNEL PO

IRFS4227TRLPBF,https://www.jinftry.ru/product_detail/IRFI4019H-117P
IRFS4227TRLPBF

IRFB4019 - 12V-300V N-CHANNEL PO

IRFB7437PBF,https://www.jinftry.ru/product_detail/IRFI4019H-117P
IRFB7437PBF

IRFB4019 - 12V-300V N-CHANNEL PO

IRFS3006TRLPBF,https://www.jinftry.ru/product_detail/IRFI4019H-117P
IRFS3006TRLPBF

IRFB4019 - 12V-300V N-CHANNEL PO

AUIRF4905,https://www.jinftry.ru/product_detail/IRFI4019H-117P
AUIRF4905

IRFB4019 - 12V-300V N-CHANNEL PO

IRFP1405PBF,https://www.jinftry.ru/product_detail/IRFI4019H-117P
IRFP1405PBF

IRFB4019 - 12V-300V N-CHANNEL PO

IRFP7530PBF,https://www.jinftry.ru/product_detail/IRFI4019H-117P
IRFP7530PBF

IRFB4019 - 12V-300V N-CHANNEL PO

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP