Vishay Siliconix IRFBC30APBF
- IRFBC30APBF
- Vishay Siliconix
- MOSFET N-CH 600V 3.6A TO220AB
- Transistors - FETs, MOSFETs - Single
- IRFBC30APBF Лист данных
- TO-220-3
- Tube
- Lead free / RoHS Compliant
- 3966
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IRFBC30APBF |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 600V 3.6A TO220AB |
Package Tube |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 |
Supplier Device Package TO-220AB |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 74W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 600 V |
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc) |
Rds On (Max) @ Id, Vgs 2.2Ohm @ 2.2A, 10V |
Vgs(th) (Max) @ Id 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 510 pF @ 25 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-220-3 |
IRFBC30APBF Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IRFBC30APBF ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Vishay Siliconix
IRFPC40PBF
MOSFET N-CH 600V 6.8A TO247-3
IRFIBE20GPBF
MOSFET N-CH 600V 6.8A TO247-3
SIHA20N50E-E3
MOSFET N-CH 600V 6.8A TO247-3
IRFBC20SPBF
MOSFET N-CH 600V 6.8A TO247-3
IRFIBF20GPBF
MOSFET N-CH 600V 6.8A TO247-3
IRFP460APBF
MOSFET N-CH 600V 6.8A TO247-3
SUM110N06-3M9H-E3
MOSFET N-CH 600V 6.8A TO247-3
SIHG20N50C-E3
MOSFET N-CH 600V 6.8A TO247-3
The most complete introduction to IGBT modules in 2023
IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.
1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications
1N5819 Schottky Diode Description:
1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications: