Infineon Technologies IRFB59N10DPBF
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- IRFB59N10DPBF
- Infineon Technologies
- MOSFET N-CH 100V 59A TO220AB
- Transistors - FETs, MOSFETs - Single
- IRFB59N10DPBF Лист данных
- TO-220-3
- Tube
-
Lead free / RoHS Compliant - 2994
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number IRFB59N10DPBF |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET N-CH 100V 59A TO220AB |
| Package Tube |
| Series HEXFET® |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-220-3 |
| Supplier Device Package TO-220AB |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 3.8W (Ta), 200W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 100 V |
| Current - Continuous Drain (Id) @ 25°C 59A (Tc) |
| Rds On (Max) @ Id, Vgs 25mOhm @ 35.4A, 10V |
| Vgs(th) (Max) @ Id 5.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 114 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 2450 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-220-3 |
IRFB59N10DPBF Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IRFB59N10DPBF ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
IRFB59N10DPBF сопутствующие товары
Комментарии
Infineon Technologies
IPA60R280P6XKSA1
MOSFET N-CH 600V 13.8A TO220-FP
IPP50R299CPXKSA1
MOSFET N-CH 600V 13.8A TO220-FP
IPP037N08N3GXKSA1
MOSFET N-CH 600V 13.8A TO220-FP
IRF100S201
MOSFET N-CH 600V 13.8A TO220-FP
AUIRF3205Z
MOSFET N-CH 600V 13.8A TO220-FP
IRFB61N15DPBF
MOSFET N-CH 600V 13.8A TO220-FP
AUIRFS8405
MOSFET N-CH 600V 13.8A TO220-FP
IRL40B215
MOSFET N-CH 600V 13.8A TO220-FP
Datasheet and working principle of 1N4001 rectifier diode
Friends who are familiar with diodes should know that 1N4001 is a common rectifier diode used to convert alternating current into direct current. This type of diode has a wide range of applications in electronic equipment and circuits.
1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications
1N5819 Schottky Diode Description:
1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.
Infineon Embedded System Memory HYPERRAM
Infineon Embedded System Memory HYPERRAM
Infineon Embedded System Memory Broad portfolio of high-performance memory solutions for automotive, industrial and communications applications
Infineon Embedded System Memory HYPERRAM Flash provides the high performance and key safety features required in automotive, industrial and communications applications. It is architected and designed for functional safety, making it the industry's first ASIL-B compliant and ASIL-D capable NOR flash. Infineon Emb
Infineon Technologies-Gate driver reinforced isolation
HV driver with 6kV isolation in a SO-8W package
Flip chip package increases power density
200V half-bridge driver in SOIC-8 package
Fluence and Northvolt to co-develop battery technology for
Grid-scale energy storage
Global consortium for power system operators and research institutes
Addionics, Saint-Gobain Ceramics team on solid state battery tech
Lead perovskite boosts solar cell efficiency over 25 percent
200kW SiC inverter hits 99 percent efficiency
