Infineon Technologies IRFB52N15DPBF
- IRFB52N15DPBF
- Infineon Technologies
- MOSFET N-CH 150V 51A TO220AB
- Transistors - FETs, MOSFETs - Single
- IRFB52N15DPBF Лист данных
- TO-220-3
- Tube
- Lead free / RoHS Compliant
- 2989
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IRFB52N15DPBF |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 150V 51A TO220AB |
Package Tube |
Series HEXFET® |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 |
Supplier Device Package TO-220AB |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 3.8W (Ta), 230W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 150 V |
Current - Continuous Drain (Id) @ 25°C 51A (Tc) |
Rds On (Max) @ Id, Vgs 32mOhm @ 36A, 10V |
Vgs(th) (Max) @ Id 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 89 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 2770 pF @ 25 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-220-3 |
IRFB52N15DPBF Гарантии
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