IRFB52N15DPBF

Infineon Technologies IRFB52N15DPBF

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  • IRFB52N15DPBF
  • Infineon Technologies
  • MOSFET N-CH 150V 51A TO220AB
  • Transistors - FETs, MOSFETs - Single
  • IRFB52N15DPBF Лист данных
  • TO-220-3
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IRFB52N15DPBFLead free / RoHS Compliant
  • 2989
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IRFB52N15DPBF
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 150V 51A TO220AB
Package
Tube
Series
HEXFET®
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3.8W (Ta), 230W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
51A (Tc)
Rds On (Max) @ Id, Vgs
32mOhm @ 36A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2770 pF @ 25 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-220-3

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