IRF740STRLPBF

Vishay Siliconix IRF740STRLPBF

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • IRF740STRLPBF
  • Vishay Siliconix
  • MOSFET N-CH 400V 10A D2PAK
  • Transistors - FETs, MOSFETs - Single
  • IRF740STRLPBF Лист данных
  • TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Bulk
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IRF740STRLPBFLead free / RoHS Compliant
  • 2034
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IRF740STRLPBF
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 400V 10A D2PAK
Package
Bulk
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
D²PAK (TO-263)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3.1W (Ta), 125W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
400 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Rds On (Max) @ Id, Vgs
550mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1400 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRF740STRLPBF Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/IRF740STRLPBF

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/IRF740STRLPBF

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/IRF740STRLPBF

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о IRF740STRLPBF ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Vishay Siliconix
Vishay Siliconix,https://www.jinftry.ru/product_detail/IRF740STRLPBF
IRFR9220TRLPBF,https://www.jinftry.ru/product_detail/IRF740STRLPBF
IRFR9220TRLPBF

MOSFET P-CH 200V 3.6A DPAK

SIR846ADP-T1-GE3,https://www.jinftry.ru/product_detail/IRF740STRLPBF
SIR846ADP-T1-GE3

MOSFET P-CH 200V 3.6A DPAK

SI7866ADP-T1-E3,https://www.jinftry.ru/product_detail/IRF740STRLPBF
SI7866ADP-T1-E3

MOSFET P-CH 200V 3.6A DPAK

SI7463DP-T1-E3,https://www.jinftry.ru/product_detail/IRF740STRLPBF
SI7463DP-T1-E3

MOSFET P-CH 200V 3.6A DPAK

SI7469DP-T1-E3,https://www.jinftry.ru/product_detail/IRF740STRLPBF
SI7469DP-T1-E3

MOSFET P-CH 200V 3.6A DPAK

SI4122DY-T1-GE3,https://www.jinftry.ru/product_detail/IRF740STRLPBF
SI4122DY-T1-GE3

MOSFET P-CH 200V 3.6A DPAK

SI7898DP-T1-E3,https://www.jinftry.ru/product_detail/IRF740STRLPBF
SI7898DP-T1-E3

MOSFET P-CH 200V 3.6A DPAK

SIR876ADP-T1-GE3,https://www.jinftry.ru/product_detail/IRF740STRLPBF
SIR876ADP-T1-GE3

MOSFET P-CH 200V 3.6A DPAK

Datasheet and working principle of 1N4001 rectifier diode

Friends who are familiar with diodes should know that 1N4001 is a common rectifier diode used to convert alternating current into direct current. This type of diode has a wide range of applications in electronic equipment and circuits.

Classification of IGBT modules, difference between application characteristics and MOSFETs

Classification of IGBT modules, difference between application characteristics and MOSFETs Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:

1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications

1N5819 Schottky Diode Description: 1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.

Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series

FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A. The following are the IGBT module series models: SKM100GAL128D, SKM145GAL128D, SKM200GAL128D, SKM300GAL128D, SKM400GAL128D, SKM145GAR128D SKM400GAR128D, SKM300GA12V, SKM400GA12V, SKM600GA12V, SKM150GAL12V, SKM400GAL12V, SKM50GB12T4, SKM75GB12T4, SKM100GB12T4, SKM150GB12T4, SKM200GB12T4
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP