Infineon Technologies IRF7303TRPBF
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- IRF7303TRPBF
- Infineon Technologies
- MOSFET 2N-CH 30V 4.9A 8-SOIC
- Transistors - FETs, MOSFETs - Arrays
- IRF7303TRPBF Лист данных
- 8-SOIC (0.154\", 3.90mm Width)
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 4530
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number IRF7303TRPBF |
| Category Transistors - FETs, MOSFETs - Arrays |
| Manufacturer Infineon Technologies |
| Description MOSFET 2N-CH 30V 4.9A 8-SOIC |
| Package Cut Tape (CT) |
| Series HEXFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-SOIC (0.154\", 3.90mm Width) |
| Supplier Device Package 8-SO |
| Power - Max 2W |
| FET Type 2 N-Channel (Dual) |
| FET Feature Standard |
| Drain to Source Voltage (Vdss) 30V |
| Current - Continuous Drain (Id) @ 25°C 4.9A |
| Rds On (Max) @ Id, Vgs 50mOhm @ 2.4A, 10V |
| Vgs(th) (Max) @ Id 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds 520pF @ 25V |
| Package_case 8-SOIC (0.154\", 3.90mm Width) |
IRF7303TRPBF Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IRF7303TRPBF ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
IRF7303TRPBF сопутствующие товары
Комментарии
Infineon Technologies
IRF9389TRPBF
MOSFET N/P-CH 30V 6.8A/4.6A 8-SO
IRF7343PBF
MOSFET N/P-CH 30V 6.8A/4.6A 8-SO
BSO615N G
MOSFET N/P-CH 30V 6.8A/4.6A 8-SO
IRF8910TRPBF
MOSFET N/P-CH 30V 6.8A/4.6A 8-SO
IPG20N06S4L26ATMA1
MOSFET N/P-CH 30V 6.8A/4.6A 8-SO
BSD235CH6327XTSA1
MOSFET N/P-CH 30V 6.8A/4.6A 8-SO
IPG20N10S4L22AATMA1
MOSFET N/P-CH 30V 6.8A/4.6A 8-SO
FF11MR12W1M1B11BOMA1
MOSFET N/P-CH 30V 6.8A/4.6A 8-SO
What is diode?
What are diodes and their characteristics in electronics?
Diodes are fundamental components in modern electronics, playing crucial roles in various applications. These tiny yet powerful devices control the flow of electrical current, ensuring the proper functioning of countless electronic circuits. Understanding diodes and their importance is essential for anyone involved in electronics, from hobbyists to professionals.
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
Infineon TRENCHSTOP IGBT7 S7
Infineon TRENCHSTOP IGBT7 S7
Infineon Technologies TRENCHSTOP IGBT7 S7 offers a broad 1200V portfolio for all industrial applications requiring short circuit capability/robustness. IGBT7 S7 is a high efficiency short circuit robust discrete IGBT with at least 10% lower saturation voltage than other products.
Infineon IGBT7 S7 offers a very flexible fully rated EC7 diode which significantly reduces the IGBT saturation V CEsat. IGBT7 offers excellent controllability and short-circuit tolerance
