Infineon Technologies IRF6706S2TR1PBF
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- IRF6706S2TR1PBF
- Infineon Technologies
- MOSFET N-CH 25V 17A DIRECTFET
- Transistors - FETs, MOSFETs - Single
- IRF6706S2TR1PBF Лист данных
- DirectFET™ Isometric S1
- Bulk
-
Lead free / RoHS Compliant - 1552
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number IRF6706S2TR1PBF |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET N-CH 25V 17A DIRECTFET |
| Package Bulk |
| Series HEXFET® |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case DirectFET™ Isometric S1 |
| Supplier Device Package DirectFET™ Isometric S1 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 1.8W (Ta), 26W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 25 V |
| Current - Continuous Drain (Id) @ 25°C 17A (Ta), 63A (Tc) |
| Rds On (Max) @ Id, Vgs 3.8mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id 2.35V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs 20 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds 1810 pF @ 13 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case DirectFET™ Isometric S1 |
IRF6706S2TR1PBF Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IRF6706S2TR1PBF ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
IRF6706S2TR1PBF сопутствующие товары
Комментарии
Infineon Technologies
IRFS31N20DTRLP
MOSFET N-CH 200V 31A D2PAK
IRFS52N15DTRLP
MOSFET N-CH 200V 31A D2PAK
IRFS7762TRLPBF
MOSFET N-CH 200V 31A D2PAK
BSC040N08NS5ATMA1
MOSFET N-CH 200V 31A D2PAK
IPB80N06S2L06ATMA2
MOSFET N-CH 200V 31A D2PAK
IPA50R350CPXKSA1
MOSFET N-CH 200V 31A D2PAK
IPA60R330P6XKSA1
MOSFET N-CH 200V 31A D2PAK
IRFS4020TRLPBF
MOSFET N-CH 200V 31A D2PAK
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ，Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
