Infineon Technologies IPT015N10N5ATMA1
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- IPT015N10N5ATMA1
- Infineon Technologies
- MOSFET N-CH 100V 300A 8HSOF
- Transistors - FETs, MOSFETs - Single
- IPT015N10N5ATMA1 Лист данных
- 8-PowerSFN
- Tube
-
Lead free / RoHS Compliant - 4718
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number IPT015N10N5ATMA1 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET N-CH 100V 300A 8HSOF |
| Package Tube |
| Series OptiMOS™ |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-PowerSFN |
| Supplier Device Package PG-HSOF-8-1 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 375W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 100 V |
| Current - Continuous Drain (Id) @ 25°C 300A (Tc) |
| Rds On (Max) @ Id, Vgs 1.5mOhm @ 150A, 10V |
| Vgs(th) (Max) @ Id 3.8V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 211 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 16000 pF @ 50 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 6V, 10V |
| Package_case 8-PowerSFN |
IPT015N10N5ATMA1 Гарантии
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