Infineon Technologies IPP65R225C7XKSA1
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- IPP65R225C7XKSA1
- Infineon Technologies
- MOSFET N-CH 650V 11A TO220-3
- Transistors - FETs, MOSFETs - Single
- IPP65R225C7XKSA1 Лист данных
- TO-220-3
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 7774
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number IPP65R225C7XKSA1 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET N-CH 650V 11A TO220-3 |
| Package Cut Tape (CT) |
| Series CoolMOS™ C7 |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-220-3 |
| Supplier Device Package PG-TO220-3 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 63W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 650 V |
| Current - Continuous Drain (Id) @ 25°C 11A (Tc) |
| Rds On (Max) @ Id, Vgs 225mOhm @ 4.8A, 10V |
| Vgs(th) (Max) @ Id 4V @ 240µA |
| Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 996 pF @ 400 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-220-3 |
IPP65R225C7XKSA1 Гарантии
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