Infineon Technologies IPP50R199CPXKSA1
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- IPP50R199CPXKSA1
- Infineon Technologies
- MOSFET N-CH 550V 17A TO220-3
- Transistors - FETs, MOSFETs - Single
- IPP50R199CPXKSA1 Лист данных
- TO-220-3
- Tube
-
Lead free / RoHS Compliant - 1170
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number IPP50R199CPXKSA1 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET N-CH 550V 17A TO220-3 |
| Package Tube |
| Series CoolMOS™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-220-3 |
| Supplier Device Package PG-TO220-3-1 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 139W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 550 V |
| Current - Continuous Drain (Id) @ 25°C 17A (Tc) |
| Rds On (Max) @ Id, Vgs 199mOhm @ 9.9A, 10V |
| Vgs(th) (Max) @ Id 3.5V @ 660µA |
| Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 100 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-220-3 |
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