Infineon Technologies IPI029N06NAKSA1
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- IPI029N06NAKSA1
- Infineon Technologies
- MOSFET N-CH 60V 24A/100A TO262-3
- Transistors - FETs, MOSFETs - Single
- IPI029N06NAKSA1 Лист данных
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Tube
-
Lead free / RoHS Compliant - 23562
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number IPI029N06NAKSA1 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET N-CH 60V 24A/100A TO262-3 |
| Package Tube |
| Series OptiMOS™ |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package PG-TO262-3 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 3W (Ta), 136W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 60 V |
| Current - Continuous Drain (Id) @ 25°C 24A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs 2.9mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id 2.8V @ 75µA |
| Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 30 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 6V, 10V |
| Package_case TO-262-3 Long Leads, I²Pak, TO-262AA |
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