Infineon Technologies IPD90N04S404ATMA1
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- IPD90N04S404ATMA1
- Infineon Technologies
- MOSFET N-CH 40V 90A TO252-3
- Transistors - FETs, MOSFETs - Single
- IPD90N04S404ATMA1 Лист данных
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 9012
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number IPD90N04S404ATMA1 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET N-CH 40V 90A TO252-3 |
| Package Tape & Reel (TR) |
| Series Automotive, AEC-Q101, OptiMOS™ |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package PG-TO252-3-313 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 71W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 40 V |
| Current - Continuous Drain (Id) @ 25°C 90A (Tc) |
| Rds On (Max) @ Id, Vgs 4.1mOhm @ 90A, 10V |
| Vgs(th) (Max) @ Id 4V @ 35.2mA |
| Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 3440 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
IPD90N04S404ATMA1 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IPD90N04S404ATMA1 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
IPD90N04S404ATMA1 сопутствующие товары
Комментарии
Infineon Technologies
IPD50R380CEATMA1
MOSFET N-CH 500V 14.1A TO252-3
BSZ0904NSI
MOSFET N-CH 500V 14.1A TO252-3
BSO083N03MSGXUMA1
MOSFET N-CH 500V 14.1A TO252-3
IPD60R400CEATMA1
MOSFET N-CH 500V 14.1A TO252-3
IRF7811AVTRPBF
MOSFET N-CH 500V 14.1A TO252-3
IRF7401TRPBF
MOSFET N-CH 500V 14.1A TO252-3
IRFL4105TRPBF
MOSFET N-CH 500V 14.1A TO252-3
BSZ22DN20NS3 G
MOSFET N-CH 500V 14.1A TO252-3
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
