IPD65R250E6XTMA1

Infineon Technologies IPD65R250E6XTMA1

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  • IPD65R250E6XTMA1
  • Infineon Technologies
  • MOSFET N-CH 650V 16.1A TO252-3
  • Transistors - FETs, MOSFETs - Single
  • IPD65R250E6XTMA1 Лист данных
  • TO-252-3, DPak (2 Leads + Tab), SC-63
  • Tape & Reel (TR)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IPD65R250E6XTMA1Lead free / RoHS Compliant
  • 4498
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IPD65R250E6XTMA1
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 650V 16.1A TO252-3
Package
Tape & Reel (TR)
Series
CoolMOS™ E6
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-3
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
208W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
16.1A (Tc)
Rds On (Max) @ Id, Vgs
250mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id
3.5V @ 400µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
950 pF @ 1000 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-252-3, DPak (2 Leads + Tab), SC-63

IPD65R250E6XTMA1 Гарантии

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