IPD50R3K0CEAUMA1

Infineon Technologies IPD50R3K0CEAUMA1

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  • IPD50R3K0CEAUMA1
  • Infineon Technologies
  • MOSFET N-CH 500V 1.7A TO252-3
  • Transistors - FETs, MOSFETs - Single
  • IPD50R3K0CEAUMA1 Лист данных
  • TO-252-3, DPak (2 Leads + Tab), SC-63
  • Cut Tape (CT)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IPD50R3K0CEAUMA1Lead free / RoHS Compliant
  • 2279
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IPD50R3K0CEAUMA1
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 500V 1.7A TO252-3
Package
Cut Tape (CT)
Series
CoolMOS™ CE
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-3
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
26W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
1.7A (Tc)
Rds On (Max) @ Id, Vgs
3Ohm @ 400mA, 13V
Vgs(th) (Max) @ Id
3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs
4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
84 pF @ 100 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
13V
Package_case
TO-252-3, DPak (2 Leads + Tab), SC-63

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