IPD12CN10N

Infineon Technologies IPD12CN10N

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • IPD12CN10N
  • Infineon Technologies
  • N-CHANNEL POWER MOSFET
  • Transistors - FETs, MOSFETs - Single
  • IPD12CN10N Лист данных
  • -
  • Bulk
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IPD12CN10NLead free / RoHS Compliant
  • 9462
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IPD12CN10N
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Description
N-CHANNEL POWER MOSFET
Package
Bulk
Series
-
Operating Temperature
-
Mounting Type
-
Package / Case
-
Supplier Device Package
-
Technology
-
Power Dissipation (Max)
-
FET Type
-
FET Feature
-
Drain to Source Voltage (Vdss)
-
Current - Continuous Drain (Id) @ 25°C
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Vgs (Max)
-
Drive Voltage (Max Rds On, Min Rds On)
-
Package_case
-

IPD12CN10N Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/IPD12CN10N

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/IPD12CN10N

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/IPD12CN10N

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о IPD12CN10N ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Infineon Technologies
Infineon Technologies,https://www.jinftry.ru/product_detail/IPD12CN10N
IPI60R385CP,https://www.jinftry.ru/product_detail/IPD12CN10N
IPI60R385CP

N-CHANNEL POWER MOSFET

BSB881N03LX3GXUMA1,https://www.jinftry.ru/product_detail/IPD12CN10N
BSB881N03LX3GXUMA1

N-CHANNEL POWER MOSFET

AUIRFR024NTRL,https://www.jinftry.ru/product_detail/IPD12CN10N
AUIRFR024NTRL

N-CHANNEL POWER MOSFET

BSB012N03LX3G,https://www.jinftry.ru/product_detail/IPD12CN10N
BSB012N03LX3G

N-CHANNEL POWER MOSFET

BSB012N03LX3GXUMA1,https://www.jinftry.ru/product_detail/IPD12CN10N
BSB012N03LX3GXUMA1

N-CHANNEL POWER MOSFET

SPI07N60C3,https://www.jinftry.ru/product_detail/IPD12CN10N
SPI07N60C3

N-CHANNEL POWER MOSFET

IPA60R520CP,https://www.jinftry.ru/product_detail/IPD12CN10N
IPA60R520CP

N-CHANNEL POWER MOSFET

IPI50R250CP,https://www.jinftry.ru/product_detail/IPD12CN10N
IPI50R250CP

N-CHANNEL POWER MOSFET

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP