Infineon Technologies IPD060N03LG
- IPD060N03LG
- Infineon Technologies
- OPTLMOS N-CHANNEL POWER MOSFET
- Transistors - FETs, MOSFETs - Single
- IPD060N03LG Лист данных
- -
- Bulk
- Lead free / RoHS Compliant
- 13917
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IPD060N03LG |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description OPTLMOS N-CHANNEL POWER MOSFET |
Package Bulk |
Series - |
Operating Temperature - |
Mounting Type - |
Package / Case - |
Supplier Device Package - |
Technology - |
Power Dissipation (Max) - |
FET Type - |
FET Feature - |
Drain to Source Voltage (Vdss) - |
Current - Continuous Drain (Id) @ 25°C - |
Rds On (Max) @ Id, Vgs - |
Vgs(th) (Max) @ Id - |
Gate Charge (Qg) (Max) @ Vgs - |
Input Capacitance (Ciss) (Max) @ Vds - |
Vgs (Max) - |
Drive Voltage (Max Rds On, Min Rds On) - |
Package_case - |
IPD060N03LG Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IPD060N03LG ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Infineon Technologies
BSO612CVG
BSO612 - 20V-60V COMPLEMENTARY M
BSC050N03LSGXT
BSO612 - 20V-60V COMPLEMENTARY M
BSZ088N03MSG
BSO612 - 20V-60V COMPLEMENTARY M
BSO080P03NS3G
BSO612 - 20V-60V COMPLEMENTARY M
IPD30N06S2L13ATMA1
BSO612 - 20V-60V COMPLEMENTARY M
BSC042N03LSG
BSO612 - 20V-60V COMPLEMENTARY M
IPS65R1K4C6
BSO612 - 20V-60V COMPLEMENTARY M
BSC030N03LSG
BSO612 - 20V-60V COMPLEMENTARY M
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i