IPB100N06S205ATMA4

Infineon Technologies IPB100N06S205ATMA4

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  • IPB100N06S205ATMA4
  • Infineon Technologies
  • MOSFET N-CH 55V 100A TO263-3
  • Transistors - FETs, MOSFETs - Single
  • IPB100N06S205ATMA4 Лист данных
  • TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Tape & Reel (TR)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IPB100N06S205ATMA4Lead free / RoHS Compliant
  • 7209
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IPB100N06S205ATMA4
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 55V 100A TO263-3
Package
Tape & Reel (TR)
Series
OptiMOS™
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
PG-TO263-3-2
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
300W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Rds On (Max) @ Id, Vgs
4.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
5110 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB100N06S205ATMA4 Гарантии

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