Infineon Technologies IPAW60R360P7SXKSA1
- IPAW60R360P7SXKSA1
- Infineon Technologies
- MOSFET N-CH 650V 9A TO220
- Transistors - FETs, MOSFETs - Single
- IPAW60R360P7SXKSA1 Лист данных
- TO-220-3 Full Pack
- Tube
- Lead free / RoHS Compliant
- 12880
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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Part Number IPAW60R360P7SXKSA1 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 650V 9A TO220 |
Package Tube |
Series CoolMOS™ P7 |
Operating Temperature -40°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 Full Pack |
Supplier Device Package PG-TO220 Full Pack |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 22W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 650 V |
Current - Continuous Drain (Id) @ 25°C 9A (Tc) |
Rds On (Max) @ Id, Vgs 360mOhm @ 2.7A, 10V |
Vgs(th) (Max) @ Id 4V @ 140µA |
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 555 pF @ 400 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-220-3 Full Pack |
IPAW60R360P7SXKSA1 Гарантии
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