IMZ120R030M1HXKSA1

Infineon Technologies IMZ120R030M1HXKSA1

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  • IMZ120R030M1HXKSA1
  • Infineon Technologies
  • SICFET N-CH 1.2KV 56A TO247-4
  • Transistors - FETs, MOSFETs - Single
  • IMZ120R030M1HXKSA1 Лист данных
  • TO-247-4
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IMZ120R030M1HXKSA1Lead free / RoHS Compliant
  • 1080
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IMZ120R030M1HXKSA1
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Description
SICFET N-CH 1.2KV 56A TO247-4
Package
Tube
Series
CoolSiC™
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-4
Supplier Device Package
PG-TO247-4-1
Technology
SiCFET (Silicon Carbide)
Power Dissipation (Max)
227W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
56A (Tc)
Rds On (Max) @ Id, Vgs
40mOhm @ 25A, 18V
Vgs(th) (Max) @ Id
5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
2120 pF @ 800 V
Vgs (Max)
+23V, -7V
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Package_case
TO-247-4

IMZ120R030M1HXKSA1 Гарантии

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