Infineon Technologies IMZ120R030M1HXKSA1
- IMZ120R030M1HXKSA1
- Infineon Technologies
- SICFET N-CH 1.2KV 56A TO247-4
- Transistors - FETs, MOSFETs - Single
- IMZ120R030M1HXKSA1 Лист данных
- TO-247-4
- Tube
- Lead free / RoHS Compliant
- 1080
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IMZ120R030M1HXKSA1 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description SICFET N-CH 1.2KV 56A TO247-4 |
Package Tube |
Series CoolSiC™ |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-4 |
Supplier Device Package PG-TO247-4-1 |
Technology SiCFET (Silicon Carbide) |
Power Dissipation (Max) 227W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 1200 V |
Current - Continuous Drain (Id) @ 25°C 56A (Tc) |
Rds On (Max) @ Id, Vgs 40mOhm @ 25A, 18V |
Vgs(th) (Max) @ Id 5.7V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 18 V |
Input Capacitance (Ciss) (Max) @ Vds 2120 pF @ 800 V |
Vgs (Max) +23V, -7V |
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V |
Package_case TO-247-4 |
IMZ120R030M1HXKSA1 Гарантии
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