Diodes Incorporated IMT4-7-F
- IMT4-7-F
- Diodes Incorporated
- TRANS 2PNP 120V 0.05A SOT26
- Transistors - Bipolar (BJT) - Arrays
- IMT4-7-F Лист данных
- SOT-23-6
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 3519
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IMT4-7-F |
Category Transistors - Bipolar (BJT) - Arrays |
Manufacturer Diodes Incorporated |
Description TRANS 2PNP 120V 0.05A SOT26 |
Package Tape & Reel (TR) |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case SOT-23-6 |
Supplier Device Package SOT-26 |
Power - Max 225mW |
Transistor Type 2 PNP (Dual) |
Current - Collector (Ic) (Max) 50mA |
Voltage - Collector Emitter Breakdown (Max) 120V |
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) 500nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 2mA, 6V |
Frequency - Transition 140MHz |
Package_case SOT-23-6 |
IMT4-7-F Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IMT4-7-F ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Diodes Incorporated
ZDT1147TA
TRANS 2PNP 12V 5A SOT223
ZXTD3M832TA
TRANS 2PNP 12V 5A SOT223
ZDT6758TA
TRANS 2PNP 12V 5A SOT223
MMDT4126-7-F
TRANS 2PNP 12V 5A SOT223
MMDT4124-7-F
TRANS 2PNP 12V 5A SOT223
DST857BDJ-7
TRANS 2PNP 12V 5A SOT223
ZXTC2063E6TA
TRANS 2PNP 12V 5A SOT223
ZXTD6717E6TA
TRANS 2PNP 12V 5A SOT223
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic
Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series
FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A.
The following are the IGBT module series models:
SKM100GAL128D, SKM145GAL128D, SKM200GAL128D, SKM300GAL128D, SKM400GAL128D, SKM145GAR128D
SKM400GAR128D, SKM300GA12V, SKM400GA12V, SKM600GA12V, SKM150GAL12V, SKM400GAL12V, SKM50GB12T4, SKM75GB12T4, SKM100GB12T4, SKM150GB12T4, SKM200GB12T4