Infineon Technologies IKZ50N65EH5XKSA1
- IKZ50N65EH5XKSA1
- Infineon Technologies
- IGBT 650V 50A CO-PACK TO-247-4
- Transistors - IGBTs - Single
- IKZ50N65EH5XKSA1 Лист данных
- TO-247-4
- Tube
- Lead free / RoHS Compliant
- 851
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IKZ50N65EH5XKSA1 |
Category Transistors - IGBTs - Single |
Manufacturer Infineon Technologies |
Description IGBT 650V 50A CO-PACK TO-247-4 |
Package Tube |
Series TrenchStop™ 5 |
Operating Temperature -40°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-4 |
Supplier Device Package PG-TO247-4 |
Power - Max 273 W |
Input Type Standard |
Reverse Recovery Time (trr) 53 ns |
Current - Collector (Ic) (Max) 85 A |
Voltage - Collector Emitter Breakdown (Max) 650 V |
IGBT Type Trench |
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A |
Gate Charge 109 nC |
Td (on/off) @ 25°C 20ns/250ns |
Test Condition 400V, 25A, 12Ohm, 15V |
Current - Collector Pulsed (Icm) 200 A |
Switching Energy 410µJ (on), 190µJ (off) |
Package_case TO-247-4 |
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The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic