IGT5259CW50

Integra Technologies Inc. IGT5259CW50

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • IGT5259CW50
  • Integra Technologies Inc.
  • GAN, RF POWER TRANSISTOR, C-BAND
  • Transistors - FETs, MOSFETs - RF
  • IGT5259CW50 Лист данных
  • -
  • Tape & Reel (TR)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IGT5259CW50Lead free / RoHS Compliant
  • 1492
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IGT5259CW50
Category
Transistors - FETs, MOSFETs - RF
Manufacturer
Integra Technologies Inc.
Description
GAN, RF POWER TRANSISTOR, C-BAND
Package
Tape & Reel (TR)
Series
-
Package / Case
-
Supplier Device Package
-
Frequency
-
Gain
-
Noise Figure
-
Power - Output
-
Transistor Type
-
Voltage - Test
-
Current - Test
-
Voltage - Rated
-
Current Rating (Amps)
-
Package_case
-

IGT5259CW50 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/IGT5259CW50

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/IGT5259CW50

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/IGT5259CW50

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о IGT5259CW50 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Integra Technologies Inc.

IGN1011L1200,https://www.jinftry.ru/product_detail/IGT5259CW50
IGN1011L1200

GAN, RF POWER TRANSISTOR, L-BAND

IGN1011L70,https://www.jinftry.ru/product_detail/IGT5259CW50
IGN1011L70

GAN, RF POWER TRANSISTOR, L-BAND

IGN1214L500B,https://www.jinftry.ru/product_detail/IGT5259CW50
IGN1214L500B

GAN, RF POWER TRANSISTOR, L-BAND

IGT8292M50,https://www.jinftry.ru/product_detail/IGT5259CW50
IGT8292M50

GAN, RF POWER TRANSISTOR, L-BAND

IGT2731M130,https://www.jinftry.ru/product_detail/IGT5259CW50
IGT2731M130

GAN, RF POWER TRANSISTOR, L-BAND

IGN0912LM500,https://www.jinftry.ru/product_detail/IGT5259CW50
IGN0912LM500

GAN, RF POWER TRANSISTOR, L-BAND

IGN2729M400R2,https://www.jinftry.ru/product_detail/IGT5259CW50
IGN2729M400R2

GAN, RF POWER TRANSISTOR, L-BAND

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP