Renesas Electronics America Inc HZ9B2TD-E
- HZ9B2TD-E
- Renesas Electronics America Inc
- DIODE ZENER
- Diodes - Zener - Single
- HZ9B2TD-E Лист данных
- -
- Bulk
- Lead free / RoHS Compliant
- 4028
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number HZ9B2TD-E |
Category Diodes - Zener - Single |
Manufacturer Renesas Electronics America Inc |
Description DIODE ZENER |
Package Bulk |
Series - |
Operating Temperature - |
Mounting Type - |
Package / Case - |
Supplier Device Package - |
Tolerance - |
Power - Max - |
Voltage - Forward (Vf) (Max) @ If - |
Current - Reverse Leakage @ Vr - |
Voltage - Zener (Nom) (Vz) - |
Impedance (Max) (Zzt) - |
Package_case - |
HZ9B2TD-E Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о HZ9B2TD-E ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Renesas Electronics America Inc
HZ4BLLRE-E
DIODE ZENER 0.25W
HZS36-2TD-E
DIODE ZENER 0.25W
HZ12C3TD-E
DIODE ZENER 0.25W
HZ5CLL-J
DIODE ZENER 0.25W
HZ5A3-E
DIODE ZENER 0.25W
HZ5A2JTD-E
DIODE ZENER 0.25W
HZS12C1TD-E
DIODE ZENER 0.25W
HZS15-2LTD-E
DIODE ZENER 0.25W
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series
FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A.
The following are the IGBT module series models:
SKM100GAL128D, SKM145GAL128D, SKM200GAL128D, SKM300GAL128D, SKM400GAL128D, SKM145GAR128D
SKM400GAR128D, SKM300GA12V, SKM400GA12V, SKM600GA12V, SKM150GAL12V, SKM400GAL12V, SKM50GB12T4, SKM75GB12T4, SKM100GB12T4, SKM150GB12T4, SKM200GB12T4
Renesas Electronics and Texas Instruments compete on Bluetooth LE
Renesas Electronics and Texas Instruments compete on Bluetooth LE
Renesas Electronics and Texas Instruments (TI) have both launched Bluetooth wireless microcontrollers for the Internet of Things (IoT), wearables and medical designs, and the two companies are officially competing over Bluetooth LE.
According to eeNews, TI introduced the CC2340 series of fourth-generation Bluetooth low energy (BLE) wireless microcontrollers, while Renesas introduced the SmartBondDA1470x series of dual-core