Renesas Electronics America Inc HZ5ALL-J-E
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- HZ5ALL-J-E
- Renesas Electronics America Inc
- DIODE ZENER
- Diodes - Zener - Single
- HZ5ALL-J-E Лист данных
- -
- Bulk
-
Lead free / RoHS Compliant - 13563
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number HZ5ALL-J-E |
| Category Diodes - Zener - Single |
| Manufacturer Renesas Electronics America Inc |
| Description DIODE ZENER |
| Package Bulk |
| Series - |
| Operating Temperature - |
| Mounting Type - |
| Package / Case - |
| Supplier Device Package - |
| Tolerance - |
| Power - Max - |
| Voltage - Forward (Vf) (Max) @ If - |
| Current - Reverse Leakage @ Vr - |
| Voltage - Zener (Nom) (Vz) - |
| Impedance (Max) (Zzt) - |
| Package_case - |
HZ5ALL-J-E Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о HZ5ALL-J-E ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
HZ5ALL-J-E сопутствующие товары
Комментарии
Renesas Electronics America Inc
HZ11BPTK-E
DIODE ZENER 10.4V 0.5W 1.92%
HZM9B-JTR
DIODE ZENER 10.4V 0.5W 1.92%
HZM24NB1TL-E
DIODE ZENER 10.4V 0.5W 1.92%
HZ5ALL-E
DIODE ZENER 10.4V 0.5W 1.92%
HZ22BPTN-E
DIODE ZENER 10.4V 0.5W 1.92%
HZU4CLL-JTRF-E
DIODE ZENER 10.4V 0.5W 1.92%
HZS11C2LRX-E
DIODE ZENER 10.4V 0.5W 1.92%
HZK5A-JTR
DIODE ZENER 10.4V 0.5W 1.92%
What is a bipolar transistor and what is its operating mode
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Datasheet and working principle of 1N4001 rectifier diode
Friends who are familiar with diodes should know that 1N4001 is a common rectifier diode used to convert alternating current into direct current. This type of diode has a wide range of applications in electronic equipment and circuits.
Renesas Electronics and Texas Instruments compete on Bluetooth LE
Renesas Electronics and Texas Instruments compete on Bluetooth LE
Renesas Electronics and Texas Instruments (TI) have both launched Bluetooth wireless microcontrollers for the Internet of Things (IoT), wearables and medical designs, and the two companies are officially competing over Bluetooth LE.
According to eeNews, TI introduced the CC2340 series of fourth-generation Bluetooth low energy (BLE) wireless microcontrollers, while Renesas introduced the SmartBondDA1470x series of dual-core
