Renesas Electronics America Inc HZ2C1RE-E
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- HZ2C1RE-E
- Renesas Electronics America Inc
- DIODE ZENER 0.5W
- Diodes - Zener - Single
- HZ2C1RE-E Лист данных
- -
- Bulk
-
Lead free / RoHS Compliant - 2669
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number HZ2C1RE-E |
| Category Diodes - Zener - Single |
| Manufacturer Renesas Electronics America Inc |
| Description DIODE ZENER 0.5W |
| Package Bulk |
| Series - |
| Operating Temperature - |
| Mounting Type - |
| Package / Case - |
| Supplier Device Package - |
| Tolerance - |
| Power - Max - |
| Voltage - Forward (Vf) (Max) @ If - |
| Current - Reverse Leakage @ Vr - |
| Voltage - Zener (Nom) (Vz) - |
| Impedance (Max) (Zzt) - |
| Package_case - |
HZ2C1RE-E Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о HZ2C1RE-E ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
HZ2C1RE-E сопутствующие товары
Комментарии
Renesas Electronics America Inc
HZS7A1-1TD-E
DIODE ZENER FOR STABIL POWER
HZS7A1J-E
DIODE ZENER FOR STABIL POWER
HZ27-2J-E
DIODE ZENER FOR STABIL POWER
HZS6C2RX-E
DIODE ZENER FOR STABIL POWER
HZS7A3LRX-E
DIODE ZENER FOR STABIL POWER
HZ30-1LTA-E
DIODE ZENER FOR STABIL POWER
HZ2C1TD-E
DIODE ZENER FOR STABIL POWER
HZS7A1LRX-E
DIODE ZENER FOR STABIL POWER
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
Renesas Electronics RZ/T2M Microprocessor
Renesas Electronics RZ/T2M Microprocessor
The Renesas RZ/T2M Group Microprocessor integrates motor control, networking and functional safety (FuSA) functions in a single chip. The RZ/T2M group MPU features dual Cortex®-R52 CPUs for real-time control and large tightly coupled memory (576KB) directly connected to the CPU for high-performance real-time processing. In addition to motor control functions, the Renesas RZ/T2M group of microprocessors offer a wealth of peripherals such as ECC, function
