Renesas Electronics America Inc HZ22-1-E
- HZ22-1-E
- Renesas Electronics America Inc
- DIODE ZENER 22V 500MW DO35
- Diodes - Zener - Single
- HZ22-1-E Лист данных
- DO-204AH, DO-35, Axial
- Bulk
- Lead free / RoHS Compliant
- 2882
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number HZ22-1-E |
Category Diodes - Zener - Single |
Manufacturer Renesas Electronics America Inc |
Description DIODE ZENER 22V 500MW DO35 |
Package Bulk |
Series HZ |
Operating Temperature 175°C (TJ) |
Mounting Type Through Hole |
Package / Case DO-204AH, DO-35, Axial |
Supplier Device Package DO-35 |
Tolerance ±2.27% |
Power - Max 500 mW |
Voltage - Forward (Vf) (Max) @ If - |
Current - Reverse Leakage @ Vr 10 µA @ 17 V |
Voltage - Zener (Nom) (Vz) 22 V |
Impedance (Max) (Zzt) 14 Ohms |
Package_case DO-204AH, DO-35, Axial |
HZ22-1-E Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о HZ22-1-E ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Renesas Electronics America Inc
HZ6B1LTD-E
DIODE ZENER 0.4W
HZ7A3LTD-E
DIODE ZENER 0.4W
HZ16-1-90
DIODE ZENER 0.4W
HZS27-1TD-E
DIODE ZENER 0.4W
HZ12B3-E
DIODE ZENER 0.4W
HZ12B3TD-E
DIODE ZENER 0.4W
HZ22-3LTD-E
DIODE ZENER 0.4W
HZ9A3TA-E
DIODE ZENER 0.4W
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications:
ON NTD2955G series packages and features are different
NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.
Renesas launches SOTB process embedded flash memory low-power technology for energy harvesting and battery-free power supply
Renesas Electronics presented the test results at the 2019 VLSI and Circuit Technology Symposium (June 9-14, 2019) held in Kyoto, Japan on June 12.
The new SOTB-based technology has been used in the rissa R7F0E embedded controller, which is specifically designed for energy harvesting applications. Renesas’ unique SOTB technology significantly reduces operating and standby power consumption. Generally speaking, the power consumption in these two states increases and decreases each other: that
Renesas Electronics - New PMIC reference designs speed time to market
Renesas Electronics - New PMIC reference designs speed time to market