HUF76633S3ST_F085

Fairchild Semiconductor HUF76633S3ST_F085

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • HUF76633S3ST_F085
  • Fairchild Semiconductor
  • MOSFET N-CH 100V 39A TO-263AB
  • Transistors - FETs, MOSFETs - Single
  • HUF76633S3ST_F085 Лист данных
  • TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/HUF76633S3ST-F085Lead free / RoHS Compliant
  • 21690
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
HUF76633S3ST_F085
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Fairchild Semiconductor
Description
MOSFET N-CH 100V 39A TO-263AB
Package
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Series
Automotive, AEC-Q101, UltraFET?
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
D2PAK (TO-263AB)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
183W (Tj)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
39A (Tc)
Rds On (Max) @ Id, Vgs
35 mOhm @ 39A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
63nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1810pF @ 25V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Max)
16V
Package_case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

HUF76633S3ST_F085 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/HUF76633S3ST-F085

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/HUF76633S3ST-F085

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/HUF76633S3ST-F085

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о HUF76633S3ST_F085 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Fairchild Semiconductor
Fairchild Semiconductor,https://www.jinftry.ru/product_detail/HUF76633S3ST-F085
FDB2552,https://www.jinftry.ru/product_detail/HUF76633S3ST-F085
FDB2552

POWER FIELD-EFFECT TRANSISTOR, 5

FDB42AN15A0_F085,https://www.jinftry.ru/product_detail/HUF76633S3ST-F085
FDB42AN15A0_F085

POWER FIELD-EFFECT TRANSISTOR, 5

NDB6060L,https://www.jinftry.ru/product_detail/HUF76633S3ST-F085
NDB6060L

POWER FIELD-EFFECT TRANSISTOR, 5

FQA13N50C_F109,https://www.jinftry.ru/product_detail/HUF76633S3ST-F085
FQA13N50C_F109

POWER FIELD-EFFECT TRANSISTOR, 5

FDB070AN06A0,https://www.jinftry.ru/product_detail/HUF76633S3ST-F085
FDB070AN06A0

POWER FIELD-EFFECT TRANSISTOR, 5

FDB8444_F085,https://www.jinftry.ru/product_detail/HUF76633S3ST-F085
FDB8444_F085

POWER FIELD-EFFECT TRANSISTOR, 5

FDPF7N50U_G,https://www.jinftry.ru/product_detail/HUF76633S3ST-F085
FDPF7N50U_G

POWER FIELD-EFFECT TRANSISTOR, 5

FDP8443_F085,https://www.jinftry.ru/product_detail/HUF76633S3ST-F085
FDP8443_F085

POWER FIELD-EFFECT TRANSISTOR, 5

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications

An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications. IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp

74LS74 Double D Flip-Flop Characteristics Pin Data Sheet Application - Can Replace Introduction

74LS74 Pinout 74LS74 CAD Model 74LS74 Features 74LS74 Application 74LS74 Equivalent What is 74LS74? How to Use 74LS74 74LS74 Connection Diagram 74LS74 Package 74LS74 Manufacturer Specifications Parts with Similar Specs

1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet

1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet An introduction to the 1N5408 power/rectifier diode is discussed here. 1N5408 is a very common rectifier diode that is widely used in electronic equipment. This is a general purpose silicon diode, the 1N5408 low frequency power diode, used in various rectification and power conversion applications.
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP