ON Semiconductor HUF76609D3ST
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- HUF76609D3ST
- ON Semiconductor
- MOSFET N-CH 100V 10A TO252AA
- Transistors - FETs, MOSFETs - Single
- HUF76609D3ST Лист данных
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Jinftry-Reel®
-
Lead free / RoHS Compliant - 1998
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number HUF76609D3ST |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer ON Semiconductor |
| Description MOSFET N-CH 100V 10A TO252AA |
| Package Jinftry-Reel® |
| Series UltraFET™ |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package TO-252AA |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 49W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 100 V |
| Current - Continuous Drain (Id) @ 25°C 10A (Tc) |
| Rds On (Max) @ Id, Vgs 160mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 425 pF @ 25 V |
| Vgs (Max) ±16V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
HUF76609D3ST Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о HUF76609D3ST ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
HUF76609D3ST сопутствующие товары
Комментарии
ON Semiconductor
FDMA910PZ
MOSFET P-CH 20V 9.4A 6MICROFET
NTD20N06T4G
MOSFET P-CH 20V 9.4A 6MICROFET
NTD20N06LT4G
MOSFET P-CH 20V 9.4A 6MICROFET
NTMFS4C03NT1G
MOSFET P-CH 20V 9.4A 6MICROFET
FDMA905P
MOSFET P-CH 20V 9.4A 6MICROFET
FDD390N15A
MOSFET P-CH 20V 9.4A 6MICROFET
NDD02N40-1G
MOSFET P-CH 20V 9.4A 6MICROFET
FDD3706
MOSFET P-CH 20V 9.4A 6MICROFET
battery charger
Battery charger according to the design circuit operating frequency to divide, can be divided into power frequency machine and high frequency machine. The power frequency machine is designed based on the traditional analog circuit principle, the internal power devices (such as transformers, inductors, capacitors, etc.) are larger, and there is generally less noise when the load is larger, but the model has strong resistance performance in the harsh grid environmental conditions, and the reliabil
What is a bipolar transistor and what is its operating mode
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
An introduction to the 1N5408 power/rectifier diode is discussed here. 1N5408 is a very common rectifier diode that is widely used in electronic equipment. This is a general purpose silicon diode, the 1N5408 low frequency power diode, used in various rectification and power conversion applications.
