HSM560JE3/TR13

Microchip Technology HSM560JE3/TR13

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • HSM560JE3/TR13
  • Microchip Technology
  • DIODE SCHOTTKY 60V 5A DO214AB
  • Diodes - Rectifiers - Single
  • HSM560JE3/TR13 Лист данных
  • DO-214AB, SMC
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/HSM560JE3-TR13Lead free / RoHS Compliant
  • 3114
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
HSM560JE3/TR13
Category
Diodes - Rectifiers - Single
Manufacturer
Microchip Technology
Description
DIODE SCHOTTKY 60V 5A DO214AB
Package
Tube
Series
-
Mounting Type
Surface Mount
Package / Case
DO-214AB, SMC
Supplier Device Package
DO-214AB
Diode Type
Schottky
Current - Average Rectified (Io)
5A
Voltage - Forward (Vf) (Max) @ If
650 mV @ 5 A
Current - Reverse Leakage @ Vr
250 µA @ 60 V
Capacitance @ Vr, F
-
Voltage - DC Reverse (Vr) (Max)
60 V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
-
Operating Temperature - Junction
-55°C ~ 175°C
Package_case
DO-214AB, SMC

HSM560JE3/TR13 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/HSM560JE3-TR13

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/HSM560JE3-TR13

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/HSM560JE3-TR13

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о HSM560JE3/TR13 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Microchip Technology
Microchip Technology,https://www.jinftry.ru/product_detail/HSM560JE3-TR13
UPS760E3/TR13,https://www.jinftry.ru/product_detail/HSM560JE3-TR13
UPS760E3/TR13

DIODE SCHOTTKY 60V 7A POWERMITE3

UPS840/TR13,https://www.jinftry.ru/product_detail/HSM560JE3-TR13
UPS840/TR13

DIODE SCHOTTKY 60V 7A POWERMITE3

UPS835L/TR13,https://www.jinftry.ru/product_detail/HSM560JE3-TR13
UPS835L/TR13

DIODE SCHOTTKY 60V 7A POWERMITE3

JANTX1N3595-1,https://www.jinftry.ru/product_detail/HSM560JE3-TR13
JANTX1N3595-1

DIODE SCHOTTKY 60V 7A POWERMITE3

JAN1N4454UR-1,https://www.jinftry.ru/product_detail/HSM560JE3-TR13
JAN1N4454UR-1

DIODE SCHOTTKY 60V 7A POWERMITE3

1N1206AR,https://www.jinftry.ru/product_detail/HSM560JE3-TR13
1N1206AR

DIODE SCHOTTKY 60V 7A POWERMITE3

JANTX1N5711-1,https://www.jinftry.ru/product_detail/HSM560JE3-TR13
JANTX1N5711-1

DIODE SCHOTTKY 60V 7A POWERMITE3

JANTX1N5819-1,https://www.jinftry.ru/product_detail/HSM560JE3-TR13
JANTX1N5819-1

DIODE SCHOTTKY 60V 7A POWERMITE3

An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications

An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications. IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp

2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics

The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.

Classification of IGBT modules, difference between application characteristics and MOSFETs

Classification of IGBT modules, difference between application characteristics and MOSFETs Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:

The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?

The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001? "1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes. 1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP