Microchip Technology HSM560JE3/TR13
- HSM560JE3/TR13
- Microchip Technology
- DIODE SCHOTTKY 60V 5A DO214AB
- Diodes - Rectifiers - Single
- HSM560JE3/TR13 Лист данных
- DO-214AB, SMC
- Tube
- Lead free / RoHS Compliant
- 3114
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number HSM560JE3/TR13 |
Category Diodes - Rectifiers - Single |
Manufacturer Microchip Technology |
Description DIODE SCHOTTKY 60V 5A DO214AB |
Package Tube |
Series - |
Mounting Type Surface Mount |
Package / Case DO-214AB, SMC |
Supplier Device Package DO-214AB |
Diode Type Schottky |
Current - Average Rectified (Io) 5A |
Voltage - Forward (Vf) (Max) @ If 650 mV @ 5 A |
Current - Reverse Leakage @ Vr 250 µA @ 60 V |
Capacitance @ Vr, F - |
Voltage - DC Reverse (Vr) (Max) 60 V |
Speed Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) - |
Operating Temperature - Junction -55°C ~ 175°C |
Package_case DO-214AB, SMC |
HSM560JE3/TR13 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о HSM560JE3/TR13 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Microchip Technology
UPS760E3/TR13
DIODE SCHOTTKY 60V 7A POWERMITE3
UPS840/TR13
DIODE SCHOTTKY 60V 7A POWERMITE3
UPS835L/TR13
DIODE SCHOTTKY 60V 7A POWERMITE3
JANTX1N3595-1
DIODE SCHOTTKY 60V 7A POWERMITE3
JAN1N4454UR-1
DIODE SCHOTTKY 60V 7A POWERMITE3
1N1206AR
DIODE SCHOTTKY 60V 7A POWERMITE3
JANTX1N5711-1
DIODE SCHOTTKY 60V 7A POWERMITE3
JANTX1N5819-1
DIODE SCHOTTKY 60V 7A POWERMITE3
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.