HGT1S12N60A4DS

ON Semiconductor HGT1S12N60A4DS

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  • HGT1S12N60A4DS
  • ON Semiconductor
  • IGBT 600V 54A 167W D2PAK
  • Transistors - IGBTs - Single
  • HGT1S12N60A4DS Лист данных
  • TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/HGT1S12N60A4DSLead free / RoHS Compliant
  • 713
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
HGT1S12N60A4DS
Category
Transistors - IGBTs - Single
Manufacturer
ON Semiconductor
Description
IGBT 600V 54A 167W D2PAK
Package
Tube
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
D²PAK (TO-263)
Power - Max
167 W
Input Type
Standard
Reverse Recovery Time (trr)
30 ns
Current - Collector (Ic) (Max)
54 A
Voltage - Collector Emitter Breakdown (Max)
600 V
IGBT Type
-
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 12A
Gate Charge
78 nC
Td (on/off) @ 25°C
17ns/96ns
Test Condition
390V, 12A, 10Ohm, 15V
Current - Collector Pulsed (Icm)
96 A
Switching Energy
55µJ (on), 50µJ (off)
Package_case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

HGT1S12N60A4DS Гарантии

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